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本文描述在Te_(40)As_(35)Ge_7Si_(18)(0.2—1.9μ)薄膜上观察到的非对称阈开关现象。薄膜是在晶体Ge上用快速蒸发淀积的。用热解的石墨接触电极作表面探测时,观察到非对称阈开关现象。用这种方法可以做成“动力学的三稳态”系统。对于n型和p型锗,非对称性恰好相反。适当地加偏压于这种系统,可以用光照来开通。此实验结果和通常用二个石墨电极的阈开关所得结果之间的差别,需要用电子—界面现象来作解释。
This paper describes the phenomenon of asymmetric threshold switching observed on Te_ (40) As_ (35) Ge_7Si_ (18) (0.2-1.9μ) films. The thin film is deposited on the crystalline Ge by flash evaporation. Asymmetric threshold switching was observed when pyrolytic graphite contact electrodes were used for surface probing. In this way, a “kinetic tristable” system can be made. The asymmetry is the opposite for n-type and p-type germanium. Appropriate to bias the system, you can use light to open. The difference between this experimental result and the result usually obtained with two graphite electrode threshold switches requires an explanation using the electron-interface phenomenon.