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美国北卡罗来纳州立大学(NCSU)的研究人员最近提出了一种新的的氮化镓生长工艺,据称和现有工艺比较,这一新工艺有望把材料的缺陷减低千分之一,从而使得那些基于氮化镓的LED发光二极管、功率器件等的输出能力增加
Researchers at North Carolina State University (NCSU) recently proposed a new gallium nitride growth process that is said to reduce material defects by a factor of 1 compared to existing processes, making it The output capacity of those gallium nitride-based LED light-emitting diodes, power devices and the like is increased