引言 纵向功率器件正被用在一种新型的大功率控制集成电路方面这些纵向器件比起用在线性技术中的传统的平面器件提供了很大的改进。在新的器件中,一个大电流接触（集电极或者漏）放在心片的背面。这使得在芯片的上表面基极/栅和发射极/漏接触及金属版图设计具有高度对称。这种大电流,大功率器件与提供控制,接口和保护功能的平面集成电路技术单片地集成在一起。 Introduction Longitudinal power devices are being used in a new type of high-power control integrated circuits. These vertical devices provide a significant improvement over traditional planar devices used in linear technology. In new devices, a large current contact (collector or drain) is placed on the back of the chip. This makes the top surface of the chip base / gate and emitter / drain contacts and metal layout design is highly symmetrical. This high-current, high-power device is monolithically integrated with planar integrated circuit technology that provides control, interface, and protection.