B++, C++, Si++, and As++ with dose of 5×10 16 cm -2 were implanted into SiN-xO-y films grown on crystalline silicon by plasma_enhanced chemical vapor deposition. The ion_implanted samples exhibit their photoluminescence with different intensities and different peak wavelengths after thermal annealing. Especially, the C++_implanted SiN-xO-y films show very intense photoluminescence at green_yellow color region. B ++, C ++, Si ++, and As ++ with dose of 5 × 10 16 cm -2 were implanted into crystalline silicon by plasma_enhanced chemical vapor deposition. after thermal annealing. Especially, the C ++ _ implanted SiN-xO-y films show very intense photoluminescence at green_yellow color region.