利用Ar等离子体对晶圆表面进行激活处理,随后进行Ni-Si晶圆键合。研究了等离子体表面激活过程中的气体流量和反应离子刻蚀功率对晶圆键合效果的影响,并利用超声扫描显微镜图片来评估晶圆键合的质量。结果表明,等离子体表面激活处理利于得到气泡和空洞数目较少的键合界面,从而有效提升晶圆键合的质量。 The surface of the wafer is activated using Ar plasma, followed by Ni-Si wafer bonding. The effects of gas flow rate and reactive ion etching power on the wafer bonding effect on the plasma surface activation process were investigated, and the quality of wafer bonding was evaluated using an ultrasound scanning microscope image. The results show that the activation of the plasma surface facilitates the bonding interface with fewer bubbles and voids, thereby effectively improving the quality of the wafer bonding.