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A resistance random access memory(RRAM) with a structure of Ag/ZnMn_2O_4/p-Si was fabricated by magnetron sputtering method. Reliable and repeated switching of the resistance of ZnMn_2O_4 fi lms was obtained between two well-defi ned states of high and low resistance with a narrow dispersion and 3V switching voltages. Resistance ratio of the high resistance state and low resistance state was found in the range of around 10~3 orders of magnitude and up to about 10~3 test cycles. The retention time of Ag/ZnMn_2O_4/p-Si device is longer than 10~6 seconds and the resistance ratio between two states remains higher than 10~3 at room temperature, showing a remarkable reliability performance of the RRAM devices for nonvolatile memory application. The equivalent simulation circuits for HRS(high resistance state) and LRS(low resistance state) were also studied by impedance spectroscopy.
A resistance random access memory (RRAM) with a structure of Ag / ZnMn 2 O 4 / p-Si was fabricated by magnetron sputtering method. Reliable and repeated switching of the resistance of ZnMn 2 O 4 fi lms was obtained between two well-defi ned states of high and low resistance with a narrow dispersion and 3V switching voltages. Resistance ratio of the high resistance state and low resistance state was found in the range of around 10 ~ 3 orders of magnitude and up to about 10 ~ 3 test cycles. The retention time of Ag / ZnMn2O4 / p-Si device is longer than 10 ~ 6 seconds and the resistance ratio between two states remains higher than 10 ~ 3 at room temperature, showing a remarkable reliability performance of the RRAM devices for nonvolatile memory application. The equivalent simulation circuits for HRS (high resistance state) and LRS (low resistance state) were also studied by impedance spectroscopy.