论文部分内容阅读
提出了一种新的用于加速 1 30 nm以下工艺交替式相移掩模设计流程的版图划分方法 ,该方法能够自适应调整版图划分的粒度 .讨论了消除相位冲突的方法和版图压缩中相位兼容性保持的策略 .利用上述算法实现的 CAD原型系统经多个工业界例子的测试表明能够有效地适应随版图尺寸而快速增长的相位冲突复杂性 ,同时提供较好的 PSM设计质量 ,并能满足不同求解精度和加速比的要求
A new layout method for accelerating the design process of the alternating phase shift mask in the process below 130 nm is proposed, which can adaptively adjust the granularity of the layout partitioning.It discusses the methods to eliminate the phase conflict and the phase Compatibility Maintaining Strategies The CAD prototype system implemented using the above algorithm has been tested by several industry examples to show that it is able to effectively adapt to the phase conflict complexity that grows rapidly with the size of the layout and at the same time provides better PSM design quality, Meet different solvability and speed-up requirements