,Quantum Discord and Entanglement in Heisenberg XXZ Spin Chain after Quenches

来源 :中国物理快报(英文版) | 被引量 : 0次 | 上传用户:wuln2909
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
Using the adaptive time-dependent density-matrix renormalization group method,the dynamics of entanglement and quantum discord of an one-dimensional spin-1/2 XXZ chain is studied when anisotropic interaction quenches are applied at different temperatures.The dynamics of the quantum discord and pairwise entanglement between the nearest qubits shows that the entanglement and quantum discord will first oscillate and then approach to a constant value.The quantum discord can be used to predict the quantum phase transition,while the entanglement cannot.
其他文献
In the relativistic mean field approximation,the relativistic energy losses of the nucleon direct Urca processes are studied in the degenerate baryon matter of
期刊
The quantum scattering dynamics calculations are carried out for the exchange and abstraction processes in the D(2S)+DS(2Ⅱ) reaction by the time-dependent wave
期刊
We investigate the dependence of elliptic flows v2 on transverse momentum PT for charged hadrons produced in nucleus-nucleus collisions at high energy by using
期刊
A new modified homotopy perturbation method is presented for strongly non-linear oscillation by coupling the homotopy perturbation method and the modified Linds
期刊
The conventional AlGaN/GaN high electron mobility transistor (HEMT),the AlGaN/GaN/AlGaN HEMT,and the AlxGa1-xN/AlyGa1-yN HEMT are fabricated on sapphire substra
期刊
新邵县陈家坊粮站在粮食购销企业人员再分流方面作了一些有益探索并取得初步成效,上岗人员由44人减至16人,2000年共节约费用8万元,具体做法是:1.以岗定人,一视同仁.粮站正副
开展资产证券化首先要经济主体对其有有效的供给和需求同时要有相应的制度保证本文通过对当前与资产证券化相关的各项制度因素进行分析后认为当前的各项制度因素对资产
InTiZnO thin-film transistors (ITZO TFTs) with Al2O3 gate dielectrics are fabricated by magnetron sputtering at room temperature.The bottom-gate-type ITZO TFTs
期刊
小麦籽粒产量90~95%来源于光合作用产物,且有2/3~4/5来自抽穗以后的光合产物。而后期植株的光合器官主要是上部叶片(尤其是旗叶)、穗下茎和穗。通过对小麦株、叶型的控制(主要
The total ionizing dose effects of partially depleted silicon-on-insulator (SOI) transistors in a 0.13 μm technology are studied by 60 Co γ-ray irradiation.Ra
期刊