半导体器件从诞生以来,就以其体积小、重量轻、性能好等优点,逐渐取代电子管而促进了电子工业的发展。随着半导体材料和器件制作技术的发展,特别是外延生长技术、集成技术、微细加工技术的发展,半导体器件进一步小型化、集成化、薄膜化。以GaAs为主的Ⅲ～Ⅴ族化合物半导体异质结器件的发展,为半导体材料和器件制作的进一步发展和超晶格等 Since the birth of the semiconductor device, it has gradually replaced the electron tube to promote the development of the electronics industry with its advantages of small size, light weight and good performance. With the development of semiconductor material and device manufacturing technology, especially the growth of epitaxial technology, integrated technology, micro-processing technology, semiconductor devices to further miniaturization, integration, thinning. The development of GaAs-based III-V compound semiconductor heterojunction devices, the further development of the fabrication of semiconductor materials and devices, and the superlattice