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利用原子层沉积法(ALD)在硫钝化后的n型InP表面沉积Al2O3薄膜进行二次钝化处理。通过光致发光(PL)测试和原子力显微镜(AFM)测试对样品的光学性质及表面形貌进行表征。硫钝化能够有效降低样品的表面态密度及无辐射复合几率,因此样品PL发光强度得到了极大提高。而样品表面的Al2O3可防止钝化层被氧化,尽管相对于沉积Al2O3薄膜前样品的光致发光强度有所降低,但样品的稳定性得到了改善,因此可进一步提高样品的发光性能。
The Al 2 O 3 film was deposited on the n-type InP surface after passivation by atomic layer deposition (ALD) for secondary passivation. The optical properties and surface topography of the samples were characterized by photoluminescence (PL) test and atomic force microscopy (AFM). Sulfur passivation can effectively reduce the surface density of the sample and the probability of no radiation recombination, so the PL intensity of the sample has been greatly improved. Al2O3 on the sample surface can prevent the passivation layer from being oxidized. Although the photoluminescence intensity of the sample decreases compared with that before the Al2O3 film is deposited, the stability of the sample is improved and the luminescent properties of the sample can be further improved.