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介绍了用微波ＣＶＤ法制备的一种新型低阈值电压大电流密度金刚石薄膜场发射冷阴极，阈值电压低于１．０９ Ｖ／μｍ，场发射电流密度高达４１８ ｍＡ／ｃｍ２，这是目前文献中报道的最好结果之一．文中还探讨了金刚石薄膜场电子发射机制．
A novel low threshold voltage high current density diamond thin film field emission cold cathode prepared by microwave CVD is introduced. The threshold voltage is lower than 1.09 V / μm and the field emission current density is as high as 418 mA / cm2, which is the current literature One of the best results reported. The paper also discusses the diamond film field electron emission mechanism.