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由铝在１５％硫酸介质中进行电化学氧化而得到的多孔Ａｌ２Ｏ３是制备有序纳米线阵列的一种很好的样模材料．在该样模中电沉积的有序Ｎｉ纳米线阵列排布规则、有序．磁滞回线测量表明，长径比为４００的Ｎｉ纳米线阵列在垂直于Ａｌ２Ｏ３表面方向（即平行于Ｎｉ纳米线方向）的矫顽力为８３１Ｏｅ，矩形度达０．９１，具有显著的磁单轴各向异性和磁单畴特性．
Porous Al2O3 obtained by electrochemical oxidation of aluminum in a 15% sulfuric acid medium is a good sample material for the preparation of ordered nanowire arrays. The ordered Ni nanowire arrays electrodeposited in this mode are arranged regularly and orderly. Hysteresis loop measurements show that the coercivity of Ni nanowire arrays with an aspect ratio of 400 at the direction perpendicular to the surface of Al 2 O 3 (ie parallel to the Ni nanowires) is 831 Oe with a squareness of 0.91 and a significant magnetic Uniaxial anisotropy and magnetic single domain properties.