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本文报道了MOS结构受软X射线辐照的辐射损伤的研究结果.指出,软X射线辐照将引起了 SiO_2层中正电荷及SiO_2-Si界面界面态密度的增加,而且在SiO_2体内形成电子陷阱和中性陷阱.文中还报道了辐射损伤的退火结果.
This paper reports the results of the study on the radiation damage of MOS structures irradiated by soft X-rays. It is pointed out that the soft X-ray irradiation will cause the positive charge in the SiO_2 layer and the increase of the interface state density at the interface of SiO_2-Si, And neutral trap.The annealing results of radiation damage were also reported.