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采用超声喷雾热分解(U ltrason ic Spray Pyrolysis,USP)方法,以醋酸锌、醋酸镁、醋酸铵、氯化铝的混合水溶液为前驱溶液,在单晶S i(100)衬底上制备了ZnO,Zn0.81Mg0.19O,N-A l共掺杂ZnO和N-A l共掺杂Zn0.81Mg0.19O薄膜。以X射线衍射(XRD)、场发射-扫描电镜(FE-SEM)、霍尔效应(Hall-effect)、光致发光(Photolum inescence,PL)谱等手段研究了薄膜的晶体结构、表面形貌、电学性能、光学性能和带隙变化。电学测试结果表明,未掺杂ZnO及Zn0.81Mg0.19O薄膜为n型导电;而N-A l共掺杂ZnO和N-A l共掺杂Zn0.81Mg0.19O薄膜呈p型导电。Zn0.81Mg0.19O和N-A l共掺杂Zn0.81Mg0.19O(p型)薄膜在维持ZnO纤锌矿结构的前提下,光学带隙随Mg掺杂量增加而增大。初步结果显示,优化工艺参数下通过Mg掺杂制备光学带隙可调的p型Zn0.81Mg0.19O薄膜,对于试制Zn1-xMgxO基同质p-n结、短波长(紫外、深紫外)器件等方面有重要意义。
The ZnO nanostructures were prepared on a single-crystal Si (100) substrate by Utrason ic Spray Pyrolysis (USP) method using a mixed aqueous solution of zinc acetate, magnesium acetate, ammonium acetate and aluminum chloride as precursor solution. , Zn0.81Mg0.19O, NA l co-doped ZnO and NA l co-doped Zn0.81Mg0.19O thin film. The crystal structure, surface morphology of the films were investigated by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), Hall-effect and photoluminescence (PL) , Electrical properties, optical properties and bandgap changes. The electrical test results show that the undoped ZnO and Zn0.81Mg0.19O films are n-type conductive while the Zn0.81Mg0.19O co-doped N-Al co-doped ZnO and N-Al are p-type conductive. Zn0.81Mg0.19O and N-Al co-doped Zn0.81Mg0.19O (p-type) films maintain the ZnO wurtzite structure under the premise of the optical bandgap with Mg doping increases. The preliminary results show that p-type Zn0.81Mg0.19O films with adjustable optical bandgap can be prepared by Mg doping under optimized process parameters. For the fabrication of Zn1-xMgxO-based homogeneous pn junctions, short wavelength (UV, deep UV) There’s important meaning.