美国得克萨斯仪器公司试制了存取时间不标准值为200毫微秒,工作时功耗小于10毫瓦,待机时功耗为15毫瓦的128千位(16K×8)紫外线擦去型 EPROM,使用了3.5微米级精度,芯片面积被控制在26.8毫米~2左右。为获得高密度化,在四个单元周围配置一个源/漏接触点。位线和接地线交替接触连接。单元面积约116微米~2。这器件虽是同步型的,但周期时间和存取时间大体相等。外围电路的各部分只在进行工作时,才能按顺序短时间工作,这是因为下面采用预充电时钟脉冲方式之故。读出周期完了以后,如(?)置于10毫微秒高水平,则接着进入下一个周期。写入是在完全静态工作状态下进 Texas Instruments, Inc. of the United States tried a non-standard access time of 200 nanoseconds, the power consumption of less than 10 milliwatts at work, standby power consumption of 15 milliwatts 128 kilowatts (16K × 8) UV wipe EPROM, Using 3.5 micron accuracy, the chip area is controlled at about 26.8 mm ~ 2. For high density, configure one source / drain contact around the four cells. Bit lines and ground lines are alternately connected. The cell area is about 116 microns ~ 2. Although this device is synchronous, but the cycle time and access time are roughly equal. Peripheral circuits in various parts of the work only in order to short-term work order, which is because the following pre-charging clock pulse so the way. After the read cycle is complete, if (?) Is set to a high level of 10 nanoseconds then the next cycle is entered. Write is in fully static state into