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本文报道了在GaN/蓝宝石作衬底生长Ge薄膜材料的外延生长及其特性研究。研究了不同外延生长条件。结果表明,使用低压化学气相外延技术在GaN/蓝宝石衬底复合衬底上可以生长Ge薄膜。高分辨X射线衍射谱研究得到了峰位分别位于2θ=27.3°、2θ=45.3°和2θ=52.9°的Ge峰.原子力显微镜研究表明得到的Ge薄膜的表面粗糙度为43.4nm。扫描电子显微镜研究表明生长的Ge/GaN/蓝宝石具有清晰的层界,表面Ge晶粒致密并且分布均匀。Raman谱表明所生长的Ge的TO声子峰位于299.6cm-1,这表明了生长的Ge薄膜具有良好的质量。
This paper reports the epitaxial growth of Ge thin films grown on GaN / sapphire substrates and their properties. Different epitaxial growth conditions were studied. The results show that Ge films can be grown on GaN / sapphire substrate by low pressure chemical vapor deposition. The results of high resolution X-ray diffraction (XRD) showed that Ge peaks at 2θ = 27.3 °, 2θ = 45.3 ° and 2θ = 52.9 °, respectively. The atomic force microscopy showed that the surface roughness of the obtained Ge thin film was 43.4 nm. Scanning electron microscopy studies show that the grown Ge / GaN / sapphire has a clear layer boundary and the surface Ge grains are dense and evenly distributed. The Raman spectrum shows that the TO phonon peak of the grown Ge is at 299.6 cm-1, indicating that the grown Ge film has good quality.