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我们研究了使用CF_4和C_2F_6等气体的反应离子束刻蚀半导体和绝缘材料,并与Ar离子铣的刻蚀速率进行了比较。在联邦科学公司制造的刻蚀系统中用考夫曼型(Kaufman-type)离子源产生离子束。当用Ar离子束刻蚀象InGaAs、InP、GaAs、Si和Ge那样的半导体时,这些材料的刻蚀速率随束流密度的增加而线性地增加。当使用CF_4或C_2F_6离子束时看到了相当不同的情况;在大束流密度下,刻蚀速率偏离了与束流密度呈线性的关系。对于以上所有材料,使用Ar的刻蚀迷率高于使用CF_4或C_2F_6的刻蚀造率。然而,对于SiO_2、BaO、LiNbO_3等基片,C_2F_6和CF_4都能给出比Ar好的线性和更高的刻蚀速率。有一些迹象表明,在大束流时,CF_4和C_2F_6造成表面碳积累。在SiO_2、BaO、LiNbO_2和其他氧化物上碳的累织很少,因为晶格中的氧将与碳以CO、CO_2、或COF_2的形式形成挥发物,所以能看到较好的线性关系。我们报导了可以用调节轴向磁场和调节输入的氧气这两种方法来调节Ⅲ-Ⅴ族化合物与束流密度的关系。我们也报导了采用C_2F_6、CF_4、Ar/O_2和Ar等气体时,在光刻胶与半导体材料之间的差异刻蚀速率。指出了用C_2F_6气体时差异刻蚀速率最好。
We studied the use of reactive ion beams of gases such as CF_4 and C_2F_6 to etch semiconductors and insulating materials and compared them to the Ar ion milling etch rates. An ion beam is generated using a Kaufman-type ion source in an etching system manufactured by Federal Scientific Corporation. When a semiconductor such as InGaAs, InP, GaAs, Si, and Ge is etched with an Ar ion beam, the etching rate of these materials increases linearly with the increase of the beam current density. When CF_4 or C_2F_6 ion beams were used, quite different cases were seen; at large beam densities, the etch rate deviated from the linear relationship with beam current density. For all the above materials, the etch rate using Ar is higher than the etch rate using CF_4 or C_2F_6. However, C_2F_6 and CF_4 can give a better linearity and higher etching rate than Ar for the substrates such as SiO_2, BaO and LiNbO_3. There are some indications that surface carbon accumulates due to CF_4 and C_2F_6 during large beam currents. Less carbon is accumulated on SiO 2, BaO, LiNbO 2 and other oxides because oxygen in the lattice will form volatiles with carbon in the form of CO, CO 2, or COF 2, so a good linear relationship can be seen. We reported that the relationship between the Group III-V compounds and the beam current density can be adjusted by adjusting the axial magnetic field and adjusting the input oxygen. We also report the differential etch rates between photoresist and semiconductor materials when using gases such as C_2F_6, CF_4, Ar / O_2 and Ar. It is pointed out that the difference etching rate is the best when using C_2F_6 gas.