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随着器件沟道尺寸的不断缩小,短沟道效应(SCE)和漏致势垒降低效应(DIBL)对常规类MOSFET结构的石墨烯纳米条带场效应管(GNRFET)影响变大,从而引起器件性能下降。文中提出了一种新型采用非对称HALO-LDD掺杂结构的GNRFET,其能够有效抑制器件中SCE和DIBL,改善器件性能。并采用一种量子力学模型研究GNRFET的电学特性,该模型基于二维NEGF(非平衡格林函数)方程和Poisson方程自洽全量子数值解。结合器件的工作原理,研究了GNRFET的电学特性和器件结构尺寸效应,通过与采用其他掺杂结构的GNRFET的电学特性对比分析,发现这种掺杂结构的石墨烯纳米条带场效应管具有更低的泄漏电流、更低的亚阈值斜率和DIBL以
As the device channel size continues to shrink, the short channel effect (SCE) and drain-induced barrier reduction effect (DIBL) have a greater impact on conventional GNRFETs resulting in Device performance degradation. In this paper, a novel GNRFET with an asymmetric HALO-LDD doping structure is proposed, which can effectively suppress SCE and DIBL in the device and improve the device performance. The electrical properties of GNRFETs were investigated using a quantum mechanics model based on a two-dimensional NEGF (non-equilibrium Green’s function) equation and a self-consistent quantum quantum solution to the Poisson’s equation. The electrical characteristics of GNRFETs and size effects of device structure are studied by the working principle of the device. By comparing with the electrical characteristics of GNRFETs using other doped structures, it is found that the doped structure of the graphene nanoribbon FETs has more Low leakage current, lower subthreshold slope and DIBL