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介绍了ULSI硅衬底的抛光工艺,并对其抛光机理进行了理论分析。通过对抛光液循环使用过程中CMP速率稳定性及其影响因素进行深入系统的分析,得出pH值、抛光温度和黏度等因素的变化是影响抛光速率稳定性的主要原因。并提出改进方案:控制好温度范围和流量的改变,以及循环中适当增加新的抛光液。为CMP速率稳定性的研究提供了有意义的借鉴。
The polishing process of ULSI silicon substrate is introduced and its polishing mechanism is analyzed theoretically. Through the systematic analysis of CMP rate stability and its influencing factors during the recycling process of slurry, it is concluded that the change of pH value, polishing temperature and viscosity are the main factors affecting the stability of polishing rate. And proposed improvement programs: to control the temperature range and flow changes, as well as the appropriate increase in circulation of new slurry. It provides a meaningful reference for the study of CMP rate stability.