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对于相同制作工艺的NPN锗硅异质结双极晶体管(SiGe HBT),在不同辐照剂量率下进行60Coγ射线的辐照效应与退火特性的研究.测量结果表明,两种辐照剂量率下,随着辐照总剂量增加,晶体管基极电流增大,共发射极电流放大倍数降低,且器件的辐照损伤、性能退化与辐照剂量率相关,低剂量率下辐照损伤较高剂量率严重.在经过与低剂量率辐照等时的退火后,高剂量率下的辐照损伤仍较低剂量率下的损伤低,即待测SiGeHBT具有明显的低剂量率损伤增强效应(ELDRS).本文对相关的物理机理进行了探讨分析.
For the same fabrication process of NPN SiGe HBTs, the irradiation effects and annealing characteristics of 60Coγ-ray at different irradiation dose rates were studied. The measurement results show that under the two radiation dose rates , With the increase of the total radiation dose, the transistor base current increases, the common emitter current magnification decreases, and the device radiation damage, performance degradation and radiation dose rate related to low dose radiation exposure to higher doses The rate of radiation damage at high dose rates was still lower at lower dose rates after annealing at lower dose rates, ie, the SiGeHBTs tested had an apparent low dose rate damage enhancement effect (ELDRS In this paper, the related physical mechanism is discussed and analyzed.