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目的通过扫描电镜观察半导体激光美白和冷光美白时牙釉质脱矿情况及使用氟保护剂后的再矿化情况。方法选取因正畸拔除的新鲜前磨牙,分为正常组(A组)、半导体激光美白组(B组)、半导体激光美白再矿化组(C组)、冷光美白组(D组)、冷光美白再矿化组(E组);B组以35%的过氧化脲凝胶涂布牙釉质、半导体激光中的7W、20HZ、30S、1/2间断频率照射,C组为B组处理后牙釉质表面涂布氟保护剂静置5分钟;D组以35%的过氧化脲凝胶涂布牙釉质、冷光照射30分钟,E组为D组处理后牙釉质表面涂布氟保护剂静置5分钟;各组分别置于扫描电镜下观察。结果B组可见牙釉质少量脱矿、部分牙釉质呈熔融状态;C组可见脱敏剂分布平坦、脱落较少;D组可见牙釉质较多部分脱矿;E组可见脱敏剂有脱落、部分有裂痕。结论半导体激光美白由于时间短和激光的高热效应,可以减少牙釉质的脱矿现象;同时因为半导体激光对牙釉质的良好处理,可以更好的保留住术后脱敏剂,可以减少牙齿美白后敏感的发生。
Objective To observe the situation of enamel demineralization and the remineralization after the use of fluorine protectants by scanning electron microscopy. Methods The fresh premolar teeth extracted from orthodontic treatment were divided into normal group (group A), semiconductor laser whitening group (group B), semiconductor laser whitening remineralization group (group C), cold light whitening group (group D) Whitening remineralization group (group E). Group B was enamel coated with 35% urea peroxide gel and irradiated with intermittent frequency of 7W, 20HZ, 30S and 1/2 in semiconductor laser. Group C was treated with group B Enamel surface coated with fluoroprotective agents to stand for 5 minutes; Group D enamel coated with 35% urea peroxide gel, cold light irradiation for 30 minutes, E group D group treated enamel surface coated with fluorine protective agent Set 5 minutes; each group were placed under scanning electron microscopy. Results In Group B, a small amount of enamel was demineralized and some of the enamel was in a molten state. In Group C, the desensitizer was evenly distributed and shedding was less. In Group D, more enamel was partially demineralized. In Group E, Some cracks. Conclusions Semiconductor laser whitening can shorten the demineralization of enamel due to the short time and the high thermal effect of laser. At the same time, because of the good treatment of enamel by semiconductor laser, the postoperative desensitizer can be better preserved, which can reduce the teeth whitening Sensitive happened.