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报道用脉冲 Ar F激光烧蚀 Si C陶瓷靶 ,在 80 0℃ Si( 1 1 1 )衬底上淀积 Si C薄膜 ,再经92 0℃真空 ( 1 0 - 3Pa)退火处理 ,制备出晶态α- Si C薄膜 .用 FTIR、XPS、SEM、XRD、TEM、PL谱等分析方法 ,研究了薄膜的表面形态、晶体结构、微结构、组成、化学态和光致发光等 .结果表明 ,在 92 0℃较低温度下 ,Si C薄膜经非晶核化 -长大过程 ,生成了晶态α- Si C( 0 0 0 1 )∥ Si( 1 1 1 )高度定向外延膜 ,薄膜内 C/ Si比约为 1 .0 1 .表面有污染 C及少量氧化态 Si和 C.室温下用 2 80 nm光激发薄膜 ,在 341 nm处有较强发光峰 ,半峰宽 45nm,显示出较好的短波发光性质 .
It has been reported that a Si C ceramic target is ablated with a pulsed ArF laser and a Si C thin film is deposited on a Si (1 1 1) substrate at 80 ° C and annealed at 92 0 ° C under vacuum (1 0-3 Pa) State α-Si C thin films were prepared.The surface morphology, crystal structure, microstructure, composition, chemical state and photoluminescence of the films were investigated by FTIR, XPS, SEM, XRD, TEM, At the lower temperature of 92 ℃, the as-grown α-Si C (0 0 0 1) ∥ Si (1 1 1) highly oriented epitaxial film was formed by the non-nucleation-growth process. The C / Si ratio of about 1 01. Pollution on the surface of C and a small amount of oxidation state Si and C. 2 80 nm at room temperature by light-excited film, 341 nm at a strong peak, the full width at half maximum 45nm, showing more Good short-wave luminescence properties.