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In this paper, Ge surface passivation by Ge O2 grown by N2 O plasma oxidation is presented and experimentally demonstrated. Results show that stoichiometrically Ge O2 can be achieved by N2 O plasma oxidation at 350°C. The transmission electron microscope observation reveals that the Ge O2/Ge interface is automatically smooth and the thickness of Ge O2is～0.9 nm with 120 s N2 O plasma oxidation. The interface state density of Ge surface after N2 O plasma passivation is about～3×1011 cm-2e V-1. With Ge O2 passivation,the hysteresis of MOS capacitor with Al2O3 as gate dielectric is reduced to～55 m V, compared to 130 m V of the untreated one. The Fermi-level at Ge O2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage, which is promising for high performance NMOSFETs fabrication.
In this paper, Ge surface passivation by Ge O2 grown by N2 O plasma oxidation was presented and experimentally demonstrated. Results show that stoichiometrically Ge O2 can be achieved by N2 O plasma oxidation at 350 ° C. The transmission electron microscope observation reveals the the Ge O2 / Ge interface is automatically smooth and the thickness of Ge O2is ~ 0.9 nm with 120 s N2 O plasma oxidation. The interface state density of Ge surface after N2 O plasma passivation is about ~ 3 × 1011 cm-2e V-1. With Ge O2 passivation, the hysteresis of MOS capacitor with Al2O3 as gate dielectric is reduced to ~ 55 mV, compared to 130 mV of the untreated one. The Fermi-level at Ge O2 / Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage, which is promising for high performance NMOSFETs fabrication.