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利用化学气相沉积法(CVD)在表面溅射Au和沉积ZnO籽晶的硅衬底上分别生长高度有序、垂直密布的直立Zn2GeO4/ZnO纳米棒阵列,利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)和光致发光(PL)谱测试手段对所制备样品进行表征和发光特性的研究。所制备的Zn2GeO4/ZnO纳米棒的直径为350~400 nm,高度为10~11μm;室温PL谱观察到3个来源于Zn2GeO4的典型发光峰。最后,对CVD法制备的Zn2GeO4/ZnO纳米棒生长机理进行了分析。该种直立性良好的一维纳米棒材料可以广泛地应用到纳米光电子器件中。
The highly ordered and vertical upright Zn2GeO4 / ZnO nanorod arrays were grown by chemical vapor deposition (CVD) on the surface of Au substrate and ZnO seed deposited on the substrate, respectively. Scanning electron microscopy (SEM), X-ray The prepared samples were characterized and characterized by X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy. The prepared Zn2GeO4 / ZnO nanorods have a diameter of 350-400 nm and a height of 10-11 μm. Three typical luminescence peaks derived from Zn2GeO4 were observed at room temperature by PL spectroscopy. Finally, the growth mechanism of Zn2GeO4 / ZnO nanorods prepared by CVD method was analyzed. This kind of well-standing one-dimensional nanorod material can be widely used in nanometer optoelectronic devices.