吉林大学电子科学与工程学院集成光电子学国家重点实验室孙洪波教授课题组的李贤斌副教授、博士生王丹与美国伦斯特理工学院张绳百教授开展合作,针对二维材料缺陷性能评价困难,推演出真空背景电荷与二维体系中带电缺陷间的库伦作用数理关系,在此基础上提出修正新方法,并成功用于氮化硼等二维半导体中本征缺陷、杂质对材料导电性影响分析.该研究以“Determination of for- Li Xianbin, associate professor and Ph.D. student at the State Key Laboratory of Integrated Optoelectronics, School of Electronic Science and Engineering, Jilin University, led by Professor Sun Hongbo and Dr. Zhang Shengbai from the United States Leanster Institute of Technology, aiming at the difficulty in evaluating the performance of 2D material defects, The mathematical relationship between the background charge in vacuum and the Coulomb interaction between charged defects in two-dimensional system was deduced. Based on this, a new correction method was proposed and successfully applied to intrinsic defects in two-dimensional semiconductors such as boron nitride. The influence of impurities on the conductivity of the material Analysis. The study to ”Determination of for-