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采用Ｔｅ作溶剂在特制的垂直区熔炉上开展了φ２０ＭＣＴ晶体的生长研究；详细阐述了该方法ＭＣＴ晶体的生长过程和生长机理；总结和分析了晶体生长过程中影响组分的因素；提出了生长过程中组分控制存在的问题和改善组分控制的措施。通过该研究，优化了生长条件，采取了适当的温度分布（窄的高温区、大的温度梯度）和降低液区高度等有效措施，获得了φ２０、轴向组分波动小（长波段可利用率高达７０％）、径向组分均匀（△ｘ＝±０．００１５）的ＭＣＴ晶体，并利用此材料作出了一系列性能良好的多元光导、光伏红外探测器件。
The growth of φ20MCT crystal was studied by using Te as solvent in a special vertical zone furnace. The growth process and growth mechanism of MCT crystal were described in detail. The factors affecting the crystal growth were summarized and analyzed. Problems in component control during the process and measures to improve component control. Through this study, we optimized the growth conditions and adopted effective measures such as appropriate temperature distribution (narrow high temperature zone, large temperature gradient) and lowering the height of the liquid zone to obtain φ20 with small fluctuations in the axial components Rate of up to 70%), uniform radial component (△ x = ± 0.0015) of the MCT crystal, and use this material to make a series of good performance of multiple photoconductive, photovoltaic infrared detector.