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采用ZYGOMarkIII-GPI数字波面干涉仪对以K9玻璃为基底的电子束蒸发方法制备的HfO2薄膜中的残余应力进行了研究,讨论了沉积速率、氧分压这两种工艺参量对HfO2薄膜残余应力的影响.实验结果表明:在所有的工艺条件下,薄膜的残余应力均为张应力;随着沉积速率的升高,氧分压的减小,薄膜的堆积密度逐渐增大,而残余应力呈减小趋势.同时用X射线衍射技术测量分析了不同工艺条件下HfO2薄膜的晶体结构,探讨了HfO2薄膜晶体结构是否会对其应力造成影响.
The residual stress in HfO2 thin films prepared by electron beam evaporation method based on K9 glass was studied by ZYGOMarkIII-GPI digital surface wave interferometer. The effect of deposition rate and oxygen partial pressure on the residual stress of HfO2 thin films The experimental results show that the residual stress of the films is tensile stress under all the technological conditions. With the increase of the deposition rate, the partial pressure of oxygen decreases and the bulk density of the films gradually increases, while the residual stress decreases The crystal structure of HfO2 thin film was measured by X-ray diffraction and the crystal structure of HfO2 thin film was investigated.