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为了满足辐射探测器的读出密度要求,完成了低噪声CM O S专用集成电荷灵敏前置放大器的设计和测试。采用0.6μm CM O S工艺,电路面积为260μm×210μm,功耗为15.9mW,比传统的电荷灵敏前放的电路密度至少提高了3个数量级。测量得到的噪声结果为:在成形时间为1μs时,零电容噪声为1 377.1 e,电容噪声斜率为43.7 e/pF。噪声的实测结果和理论分析比较吻合,间接测量了使用工艺NM O S的1/f噪声系数,为低噪声设计提供了参考依据。
In order to satisfy the readout density requirement of the radiation detector, the design and testing of a low-noise CM O S-specific integrated charge-sensitive preamplifier has been completed. The 0.6μm CM O S process has a 260μm × 210μm circuit area and a power dissipation of 15.9mW, which is at least 3 orders of magnitude greater than that of the conventional charge-sensitive preamplifier. The measured noise results are as follows: at 1 μs shaping time, the zero capacitance noise is 1 377.1 e and the capacitance noise slope is 43.7 e / pF. The measured results of the noise are in good agreement with the theoretical analysis, and indirectly measure the 1 / f noise figure of using the technology NM O S, which provides a reference for low noise design.