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Ge1-xSnx是一种新型IV族合金材料,在光子学和微电子学器件研制中具有重要应用前景.本文使用低温分子束外延(MBE)法,在Ge(001)衬底上生长高质量的Ge1-xSnx合金,组分x分别为1.5%,2.4%,2.8%,5.3%和14%,采用高分辨X射线衍射(HR-XRD)、卢瑟福背散射谱(RBS)和透射电子显微镜(TEM)等方法表征Ge1-xSnx合金的材料质量.对于低Sn组分(x5.3%)的样品,Ge1-xSnx合金的晶体质量非常好,RBS的沟道/随机产额比(χmin)只有5.0%,HR-XRD曲线中Ge1-xSnx衍射峰的半高全宽(FWHM)仅100″左右.对于x=14%的样品,Ge1-xSnx合金的晶体质量相对差一些,FWHM=264.6″.
Ge1-xSnx is a new type of Group IV alloy material, which has important application prospects in the development of photonics and microelectronics devices.This paper uses low temperature molecular beam epitaxy (MBE) method to grow high quality Ge1-xSnx alloy with composition x of 1.5%, 2.4%, 2.8%, 5.3% and 14%, respectively. High resolution X-ray diffraction (HR-XRD), Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM) were used to characterize the material quality of Ge1-xSnx alloys.For the samples with low Sn content (x5.3%), the crystal quality of Ge1-xSnx alloys is very good, and the channel / stochastic yield ratio of RBS (χmin) Only 5.0%, the full width at half maximum (FWHM) of the Ge1-xSnx diffraction peak in the HR-XRD curve is only about 100. The crystal quality of the Ge1-xSnx alloy is relatively poor with x = 14% of the sample, FWHM = 264.6 ".