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我们用辉光放电法在较低的衬底温度下(90℃)获得了掺磷微晶化硅(n~+μC-Si).并对微晶化与工艺条件之间的关系进行了详细的研究,在150℃衬底温度,2％掺杂时获得了电导率近30(Qcm)~(-1),电导激活能近似为零的微晶化材料.对微昌化材料的结构进行了小角度X光衍射,拉曼散射谱的分析,并用扫描电镜观察了形貌.这种材料的晶粒较小而且结构均匀.又由于生长温度低,rf功率小,有利于与其它器件工艺匹配.文章对实验结果进行了讨论.
Phosphorus-doped microcrystalline silicon (n ~ + μC-Si) was obtained by a glow discharge method at a low substrate temperature (90 ° C) and the relationship between microcrystallization and process conditions was detailed , A microcrystalline material with a conductivity of nearly 30 (Qcm) -1 and a conduction activation energy of approximately zero was obtained at a substrate temperature of 150 ℃ with a doping of 2% Small angle X-ray diffraction and Raman scattering spectrum analysis were performed, and the morphology was observed by scanning electron microscopy.The grain size of this material was small and uniform in structure.Because the growth temperature was low and the rf power was small, it was conducive to process with other devices Matching. The article discussed the experimental results.