用射频溅射法在P型硅衬底上生长了纳米硅薄膜,衬底温度控制在100℃左右,工作气体选用H2+Ar,氢气的分压控制在31%到73%,同时改变薄膜的沉积时间。用Raman、XRD、AFM、SEM及椭偏仪对薄膜的特性进行了测定。XRD的测试结果表明,样品中存在一种微结构,不同于用PECVD方法生长的薄膜。椭偏仪的测试结果给出这种薄膜具有宽带隙。在室温条件下对异质结薄膜电池的I-V特性进行了测量。 A silicon thin film was grown on a P-type silicon substrate by RF sputtering. The substrate temperature was controlled at about 100 ℃. The working gas was H2 + Ar. The hydrogen partial pressure was controlled at 31% -73% Deposition time. The properties of the films were characterized by Raman, XRD, AFM, SEM and ellipsometry. XRD results show that there is a microstructure in the sample, which is different from the film grown by PECVD. The ellipsometer test results show that this film has a wide bandgap. The I-V characteristics of heterojunction thin-film cells were measured at room temperature.