采用无催化剂的气相输运方法在n-Si衬底上制备了ZnO纳米线.其直径约100nm至200nm,长度约几微米,X射线衍射图谱的所有峰位与典型的六角纤锌矿ZnO相匹配.霍尔效应测量表明纳米结构ZnO具有良好的导电性.纳米ZnO/n-Si的电压电流关系显示其具有整流特性.基于纳米ZnO/n-Si界面的能带结构对其导电特性进行了分析讨论。 ZnO nanowires were prepared on n-Si substrates by a gas-free catalyst transport method and their diameters ranged from about 100 nm to about 200 nm with a length of about several micrometers. All the peaks of the X-ray diffraction pattern were similar to the typical hexagonal wurtzite ZnO phase Matching. Hall effect measurements show that the ZnO nanostructures have good electrical conductivity. The voltage-current relationship of ZnO / n-Si nanostructures shows that the nanostructured ZnO has the characteristics of rectification. Based on the band structure of the nanostructured ZnO / n-Si interface, Analysis and discussion.