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硅薄层外延是研制ECL超高速电路的关键工艺之一。本文介绍用SiCl_4常规外延系统,在双埋层(As、B)硅衬底上进行薄层生长的主要工艺条件及结果。并对其薄层参数作简要分析讨论。
Thin-layer epitaxial silicon is one of the key technologies for developing ultra-high-speed circuits in ECL. In this paper, we introduce the main process conditions and results of thin layer growth on double buried (As, B) silicon substrates by SiCl_4 conventional epitaxial system. And its thin layer parameters for brief analysis and discussion.