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本文利用红外反射峰位置与薄膜厚度及密度的关系研究了在SiC衬底上热氧化生长出的SiO2在退火前及在不同温度用高N2退火一小时后的1085cm-1附近红外反射峰的漂移情况,分析了SiO2的密度变化。密度的变化反映了退火中SiO2中的C和CO的扩散以及空位型缺陷的退火过程。
In this paper, the relationship between infrared reflection peak position and film thickness and density of SiO2 grown on SiC substrate was investigated before and after annealing at high temperature N2 annealing for one hour near the infrared reflection peak at 1085cm-1 Situation, analysis of the density of SiO2 changes. The variation of density reflects the diffusion of C and CO in SiO2 and the annealing process of vacancy defects in SiO2.