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对GaN样品薄膜进行了喇曼背散射几何配置下的喇曼散射测试与分析 ,其样品分别是在不同衬底上以金属有机物气相沉积 (MOCVD)法和分子束外延 (MBE)法生长的 .观测到了纤锌矿结构GaN的允许模式A1(LO)模和E2 (高 )模 ,同时也观测到了一些禁戒模式 .结果表明 :受激喇曼散射是研究GaN结构的一种有效手段
Raman scattering measurements and analysis were performed on the GaN sample films under the Raman backscattering geometry. The samples were grown on different substrates by metalorganic vapor deposition (MOCVD) and molecular beam epitaxy (MBE) respectively. The allowed modes A1 (LO) mode and E2 (high mode) of wurtzite GaN were observed and some of the forbidden modes were also observed.The results show that stimulated Raman scattering is an effective method to study GaN structure