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利用甚高频等离子增强化学气相沉积(VHF-PECVD)制备了一系列微晶硅(μc-Si:H)薄膜。研究分析了功率密度、硅烷浓度和气体流量在较高沉积气压(500 Pa和600 Pa)下对薄膜生长速率、结晶状况和电学特性的影响。研究表明:在高压强条件下,硅烷浓度和气体流量对沉积速率影响显著,而功率密度影响较弱;高沉积速率生长的薄膜孵化层较厚;电学特性较好的薄膜位于非晶/微晶过渡区。经过工艺的初步优化,在高压强(600 Pa)条件下,使微晶硅薄膜的沉积速率提升到2.1 nm/s。
A series of microcrystalline silicon (μc-Si: H) films were prepared by VHF-PECVD. The effects of power density, silane concentration and gas flow on the growth rate, crystallinity and electrical properties of thin films at higher deposition pressures (500 Pa and 600 Pa) were analyzed. The results show that under the conditions of high pressure and high pressure, the concentration of silane and the flow rate of gas have a significant effect on the deposition rate, but the power density has a little influence on the deposition rate. The film with thicker growth rate has a thicker incubation layer. Transition zone. After preliminary optimization of the process, the deposition rate of the microcrystalline silicon thin film is increased to 2.1 nm / s under high pressure (600 Pa).