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研究了ＧａＡｓ／ＡｌＧａＡｓ多量子阱结构的电场光调制特性，测量了光反射谱、光电流谱和光电流电压特性．结果表明，在Ｉ－Ｖ特性中存在光电流负微分电阻区．由这种多量子阱材料制备的自电光效应器件（ＳＥＥＤ）观察到明显的量子限制Ｓｔａｒｋ效应．
The electric field modulation characteristics of GaAs / AlGaAs multiquantum well structure were investigated. The optical reflectance spectrum, photocurrent spectrum and photocurrent voltage characteristics were measured. The results show that there is a photocurrent negative differential resistance region in the I-V characteristic. Significant quantum confinement Stark effect was observed for self-electro-optic effect devices (SEEDs) fabricated from this multiple quantum well material.