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分析了90nm 及其以上技术、栅氧化及其氮处理工艺的局限性,强调了等离子体氮处理技术在90nm及其以下技术中的必要性。介绍了应用材料公司 DPN MOS绝缘栅氮处理技术,并出示了部分试验数据。
The limitations of 90nm and above techniques, gate oxidation and nitrogen treatment are analyzed. The necessity of plasma nitrogen treatment at 90nm and below is emphasized. The application of DPN MOS insulated gate nitrogen treatment technology was introduced and part of the experimental data was presented.