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利用直流磁控溅射工艺,在石英玻璃衬底上沉积出了具有高度C轴择优取向的掺Ti氧化锌(ZnO∶Ti,TZO)透明导电薄膜。研究了衬底温度对TZO薄膜应力、结构和光电性能的影响。结果表明,衬底温度对TZO薄膜的结构、应力和电阻率有重要影响。TZO薄膜为六角纤锌矿结构的多晶薄膜。在衬底温度为100℃时,实验获得的TZO薄膜电阻率具有最小值2.95×10-4Ω.cm,400℃时薄膜出现孪晶,随着温度的升高,薄膜应力具有减小的趋势。实验制备的TZO薄膜附着性能良好,可见光区平均透过率都超过91%。
Using DC magnetron sputtering process, a Ti-doped ZnO (ZnO: Ti, TZO) transparent conductive film with a high degree of C-axis preferred orientation was deposited on a quartz glass substrate. The effects of substrate temperature on the stress, structure and photoelectric properties of TZO films were investigated. The results show that the substrate temperature has an important effect on the structure, stress and resistivity of the TZO thin films. TZO film hexagonal wurtzite polycrystalline thin film structure. When the substrate temperature is 100 ℃, the resistivity of the obtained TZO thin film has a minimum value of 2.95 × 10-4 Ω · cm. When the temperature is 400 ℃, twins appear. With the increase of the temperature, the stress of the thin film tends to decrease. Experimental TZO films prepared by good adhesion, the visible light transmittance of more than 91%.