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该文报道具有最小比导通电阻的~1.7kV 4H-SiC结势垒肖特基二极管。首先通过数值仿真对结势垒肖特基(junction barrier Schottky，JBS)二极管的有源区和终端结构进行了优化设计。实验结果验证了场限环(floating guard ring，FGR)终端的优化设计结构具有较强的鲁棒性，能够抵抗工艺中环间距的变化以及钝化层中寄生电荷的影响。实验制作的4H-SiC结势垒肖特基二极管实现了2.5 mΩ·cm2的最小比导通电阻值，接近于理论值(2.4 mΩ·cm2)，并且具有优秀的反向阻断特性，获得了最高1.75 kV的阻断电压(达到了95%的理论值)和83%的器件良率，从而实现了SiC JBS二极管品质因数的最高记录(UB2/Ron_sp=1225 MW/cm2)。“,”Thispaper reported the lowest specific on-resistance of 4H-SiC junction barrier Schottky (JBS) diodes for ~1.7kV blocking voltage. Both of the active region and termination structure of the 4H-SiC junction barrier Schottky diodes were designed. A low specific on-resistanceRon_sp of 2.5mΩ·cm2was achieved, which was close to the theoretical value (2.4mΩ·cm2). The floating guard ring (FGR) termination structure was revised to achieve a highly robust blocking performance, accounting for the effects of the ring spacing variation and parasitic charge in the passivation layer. The experimental results exhibited an excellent reverse blocking performance. A maximum blocking voltage of 1.75kV (95% of the theoretical value) and a yield of 83% (UBR>1.6kV) were achieved, achieving a record of FOMUB2/Ron_sp(1225MW/cm2) for SiC JBS diodes.