众所周知,基片中的缺陷能引起扩硼二极管反向漏电增大、扩磷三极管发射极收集极局部穿通,造成管芯成品率大大下降。通过实验证明,采用铬离子抛光法是造成大量缺陷的原因之一。改用铜离子抛光法后,使缺陷密度下降到10~4个/cm~2以下,有的甚至可以与硅材料体内缺陷相比,从而提高了管芯成品率。 As we all know, defects in the substrate can cause the reverse leakage of boron-doped diodes increases, the local collector of the phosphorus-rich transistor emitter punch through, resulting in significantly reduced die yield. Experiments show that the use of chromium ion polishing is one of the causes of a large number of defects. Switch to copper ion polishing method, the defect density decreased to 10 ~ 4 / cm ~ 2 or less, and some even compared with the defects of silicon materials, thereby increasing the yield of the die.