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用Ｘ射线四晶衍射仪测量了不同温度下退火的注氢单晶硅的摇摆曲线，分析了不同温度退火后晶格内应力产生及消失的过程。并与离子背散射沟道分析进行了比较。结果表明，在４００℃左右，氢注入形成的氢复合体分解；形成氢分子，氢分子在晶格中聚集，生成氢气，在高温下膨胀，引起晶格形变，并产生缺陷；当退火温度达到５００℃以后，氢气的膨胀已超过晶体的屈服强度，产生了大量的缺陷、位错，同时在硅晶体内形成气泡，并在硅晶体表面造成砂眼、剥离等现象。
The rocking curves of single crystal silicon wafers annealed at different temperatures were measured by X-ray four-crystal diffractometer. The process of stress generation and disappearance in the lattice after annealing at different temperatures was analyzed. And compared with ion backscatter channel analysis. The results show that the hydrogen recombination formed by hydrogen injection is decomposed at about 400 ℃. Hydrogen molecules are formed, hydrogen molecules accumulate in the crystal lattice to generate hydrogen, which expands at high temperature and causes lattice deformation and defects. When the annealing temperature reaches After 500 ℃, the expansion of hydrogen gas has exceeded the yield strength of the crystal, resulting in a large number of defects and dislocations. At the same time, bubbles are formed in the silicon crystal and blisters on the silicon crystal surface.