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众所周知,GaP为宽禁带间接型半导体,是制作绿色发光二极管的主要材料之一;但在生长GaP单晶过程中很难避免杂质Fe的存在,这就使得用GaP制成的发光器件的效率难以提高。显然研究Fe在GaP中的行为,进而了解其对以GaP为基础制成的发光器件发光效率影响的机制,无疑在应用上有重要的意义。近年来对Fe及其它过渡元素在半导体中行为的研究,无论从实验或理论方面均取得重要进展;如Fe杂质在GaP中取代Ga晶位,处于由4个近邻P原子形成的正四面体中心,具有四方对称性旧,通过EPR(电子顺磁共振)谱和其它实验证实了Fe在GaP中的电荷态分别为3d~5,3d~7和3d~6。我们应用M(?)ssbauer谱和EPR谱方法,研究Fe注入GaP后,在GaP中的行为和相应的物理机制;观测了不同退火条件下注入样品表面杂质Fe超精细相互作用参数的变化,并与Fe扩散入GaP的情况相对比,取得一些有趣的结果。
It is well-known that GaP is a kind of wide band gap indirect semiconductor and is one of the main materials for making green light-emitting diodes. However, it is difficult to avoid the presence of impurities Fe during the growth of GaP single crystals, which makes the efficiency of light-emitting devices made of GaP Difficult to improve. Obviously, the research on the behavior of Fe in GaP and its mechanism on the luminescent efficiency of GaP-based light-emitting devices will undoubtedly be of great significance. In recent years, the research on the behavior of Fe and other transition elements in semiconductors has made important progress both in experiment and theory. For example, Fe impurity replaces Ga crystal in GaP and is located in the center of tetrahedron formed by four adjacent P atoms , Which has the tetragonal symmetry. It was confirmed by EPR (electron paramagnetic resonance) spectrum and other experiments that the charge states of Fe in GaP were 3d ~ 5,3d ~ 7 and 3d ~ 6, respectively. We used M (?) Ssbauer spectrum and EPR spectrum method to study the behavior and corresponding physical mechanism of Fe in GaP after Ga injection into GaP. We observed the changes of ultrafine interaction parameters of Fe on the surface of the implanted sample under different annealing conditions In contrast to the diffusion of Fe into GaP, some interesting results have been obtained.