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1、前言本文述及的聚焦离子束是指从极小区域发射通过透镜系统实现聚焦的离子束。最近,聚焦离子束技术引起人们的关注大概是因为与半导体器件的高集成化直接相关。目前成批生产中的曝光技术是以缩小投影曝光为主,其加工极限为1～2μm左右下一步预计要用电子束曝光,其加工极限约为0.5μm,更进一步将用X射线曝光,或用离子束曝光,其加工极限可望达到0.1μm,但X射线曝光的束源和光学系统尚有问题,而离子束曝光由于液态金属离子源用于聚焦离子束技术,所以尽管光学系统用磁透镜还有困难,但是带电粒子光学是基本成熟的技术,所以与X射线曝光相比实现离子束曝光的可能性也许更大。
1, Preface The focused ion beam referred to herein refers to the ion beam emitted from a very small area that is focused by a lens system. Recently, focused ion beam technology has drawn much attention because of the direct integration with semiconductor devices. At present, the mass production of exposure technology is to reduce the projection exposure, the processing limit of about 1 ~ 2μm next step is expected to use electron beam exposure, the processing limit of about 0.5μm, further X-ray exposure, or Ion beam exposure, the processing limit is expected to reach 0.1μm, but the X-ray beam source and the exposure of the optical system is still a problem, and ion beam exposure due to liquid metal ion source for focused ion beam technology, so although the optical system with magnetic Lenses are still difficult, but charged particle optics is a well-established technique so the likelihood of ion beam exposure may be greater than for X-ray exposure.