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本文研究了一个直拉硅单晶生长的试验系统。它是一种多功能高交叉的改进设备,已证明新工艺的可行性,并可作为建造生产设备的基础。两年来每周生长单晶的结果,证明在一些重要方面数控优于模拟控制。首先,全过程的可重复性及对全过程的紧密控制使生产率提高了30%。此外,还可以一种相对恒定的拉速生长晶体,并主要以温度来实现对直径的控制。产出的晶体具有平滑和光亮的外园表面,没有模拟控制生长的晶体所具有的典型波状外观。
This article studies a Czochralski silicon growth test system. It is a multifunctional, high-crossing improvement device that has demonstrated the viability of new processes and can serve as a basis for building production equipment. The results of single crystal growth per week over two years proved that numerical control is superior to analog control in some important aspects. First, the entire process repeatability and close control of the entire process increased productivity by 30%. In addition, it is possible to grow the crystal at a relatively constant rate of pull and to achieve the control of the diameter primarily at the temperature. The resulting crystals have a smooth and bright outer circular surface without the typical wavy appearance of crystals that simulate the growth of the control.