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根据核反应过程中发射带电粒子在硅半导体中的最大能量沉积 ,利用带电粒子在硅半导体中的阻止本领曲线 ,同时实现半导体探测器的厚度确定及与之组合的CsI(Tl)的刻度
According to the maximum energy deposition of charged particles in a silicon semiconductor during the nuclear reaction, the stopping curve of charged particles in the silicon semiconductor is utilized, and the thickness of the semiconductor detector and the combination of CsI (Tl)