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本文介绍一种新研制的,具有优化高温工作能力的1700V IGBT和二极管芯片组。由于引入新的终端概念和硅设计,改进了ABB公司的最新一代平面栅1700V IGBT(SPT+)性能。通过局部质子寿命控制层的引入,150℃下二极管的漏电流已显著减小,同时保留了与先前SPT(软穿通)二极管工艺平台相同的电学特性。上述所有特征有望使额定值在3600A、工作在-40℃到150℃结温变化范围内的1700V模块研制成为可能。这种模块将具有低损耗和高安全工作区(SOA)。高于175℃工作温度方向的拓展,将在以后介绍。
This article describes a newly developed 1700V IGBT and diode chipset with optimized high temperature capability. ABB’s latest generation of planar gate 1700V IGBT (SPT +) has been improved due to the introduction of new terminal concepts and silicon designs. With the introduction of a local proton lifetime control layer, the diode leakage current has been significantly reduced at 150 ° C while retaining the same electrical characteristics as the previous SPT (soft-punch-through) diode process platform. All of the above features are expected to make possible the development of a 1700V module rated at 3600A and operating over the -40 ° C to 150 ° C junction temperature range. This module will have low loss and high safe working area (SOA). Higher than the 175 ℃ operating temperature direction of the expansion, will be introduced later.