最近,绝缘衬底上的硅膜相当受人重视,因为减少了在薄膜中制作的相邻器件间交流和直流的相互影响。最感兴趣的是集中在蓝宝石和尖晶石上异质外延淀积的硅层,由于发现这种硅膜中的少数载流子寿命短,因而它们的应用就被限制在多数载流子的MOS晶体管上。与此相类似的一种可取方法是用电化学腐蚀工艺(这种腐蚀在界限分明的n-n~+界面就停止),由厚单晶硅片制成硅薄膜。增加一厚的多晶硅绝缘层作 More recently, silicon films on insulating substrates have gained considerable attention because of the reduced interaction between alternating and direct current between adjacent devices made in the film. Of most interest is the heteroepitaxial deposition of silicon layers on sapphire and spinel. The discovery of minority carriers in such silicon films has been found to have limited application to MOS Transistor on. A similar approach to this is to fabricate a silicon thin film from a thick monocrystalline silicon wafer using an electrochemical etching process that stops at a well-defined n-n ~ + interface. Add a thick layer of polysilicon for insulation