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采用酞菁铁高温裂解法在镀有镍金缓冲层的硅基底上生长了碳纳米管薄膜(CNTs),并采用二极结构在单脉冲模式下研究了其强流脉冲发射特性。结果表明:在脉冲电场峰值相同的条件下(~12.1V/μm),阴阳极间距越小,冷阴极的发射电流越大,且冷阴极的开启场强越小;当阴阳极间距为14cm时,CNTs薄膜的强流脉冲发射电流峰值为312A(电流密度为15.9A/cm~2),对应的开启场强为4.3 V/μm;当阴阳极间距为12.8cm时,CNTs薄膜的强流脉冲发射电流峰值为747.2A(电流密度为38.OA/cm~2),对应的开启场强为4.0 V/μm。
Carbon nanotubes (CNTs) films were grown on a silicon substrate coated with Ni - Au buffer by pyrophosphoric iron pyrolysis method. The pulsed emission characteristics of the CNTs were studied by single - pulse mode with a bipolar structure. The results show that the emission current of the cold cathode increases with the decrease of the distance between the anode and the cathode under the same pulse electric field (~ 12.1 V / μm), and the opening field strength of the cold cathode decreases. When the distance between the anode and cathode is 14 cm , The peak current of CNTs film is 312A (current density is 15.9A / cm ~ 2), the corresponding turn-on field is 4.3 V / μm. When the distance between anode and cathode is 12.8cm, the strong current pulse of CNTs film The peak emission current is 747.2A (current density of 38.OA / cm ~ 2), the corresponding open field strength of 4.0 V / μm.