ＳｉＣ具有禁带宽度大、热导率高、电子的饱和漂移速度大、临界击穿电场高和介电常数低等特点，在高频、大功率、耐高温、抗辐照的半导体器件及紫外探测器和短波发光二极管等方面具有广泛的应用前景。本文简要介绍ＳｉＣ半导体材料的液相外延、化学气相和分子束外延生长的概况及生长过程中杂质的控制。 SiC has the characteristics of large forbidden band width, high thermal conductivity, high saturation drift speed of electrons, high critical breakdown electric field and low dielectric constant. In the high frequency, high power, high temperature resistant and radiation resistant semiconductor devices and ultraviolet Detectors and short-wave light-emitting diode has a wide range of applications. This article briefly introduces the liquid phase epitaxy of SiC semiconductor materials, the overview of chemical vapor and molecular beam epitaxy and the control of impurities in the growth process.